Scaling AI Data Center Power Delivery with Si, SiC, and GaN
Silicon CoolMOSTM devices offer the best cost-performance ratio for this frequency range and board size.
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Silicon CoolMOSTM devices offer the best cost-performance ratio for this frequency range and board size.
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Future-proof your next UPS with Wolfspeed''s next-gen wide bandgap silicon carbide semiconductors.
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The 70% reduction in power losses of SiC based UPS directly leads to an increase in the double-conversion efficiency to 98.2%. This high efficiency not only occurs at high load situations but also
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The main isolation and DC/DC conversion stage in a data center power supply can be one of several high-efficiency topologies. The LLC converter is popular for its simplicity, its zero
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SiC-based gallium nitride devices, due to their small size and high power, are gradually being used in base station power amplifiers. The high thermal conductivity and low RF loss of SiC make it an ideal
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The use of Silicon Carbide (SiC) power supplies, with their power density, reliability, and design flexibility, is gaining recognition among engineers for previously untapped applications.
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Base stations, especially those supporting 5G and upcoming 6G networks, require high-efficiency power amplifiers and robust heat management —a sweet spot for SiC technology. Superior
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Silicon Carbide (SiC) substrates are central to this shift, enabling more efficient base stations with lower energy consumption and enhanced durability.
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Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the
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There are numerous methods to generate the isolated gate bias power supplies for Silicon Carbide MOSFETs. The different design approaches presented here allow the designer to select the most
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